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| RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control from logic circuit supply voltages. Formerly developmental type TA09520. Features * 4A, 60V * rDS(ON) = 0.600 * Design Optimized for 5 Volt Gate Drive * Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits * SOA is Power Dissipation Limited * 175oC Rated Junction Temperature * Logic Level Gate * High Input Impedance * Related Literature Ordering Information PART NUMBER RFD4N06L RFD4N06LSM PACKAGE TO-251AA TO-252AA BRAND RFD4N06L RFD4N06LSM - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE SOURCE JEDEC TO-252AA DRAIN (FLANGE) DRAIN (FLANGE) 6-189 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFD4N06L, RFD4N06LSM Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFD4N06L RFD4N06LSM 60 60 10 4 10 30 0.20 -55 to 175 300 260 UNITS V V V A A W W/oC oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derated above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 250A TC = 25oC, VDS = 50V, VGS = 0V TC = 125oC, VDS = 50V, VGS = 0V VGS = 10V, V = 0V DS ID = 1A, VGS = 5V ID = 2A, VGS = 5V ID = 4A, VGS = 7.5V MIN 60 1 VGS = 0-10V VGS = 0-5V VGS = 0-1V VDD = 48V, ID = 2A, RL = 24 TYP MAX 2.5 1 50 100 0.8 2.0 4.0 0.600 4.5 20 130 40 160 8 5 1 5 UNITS V V A A nA V V V V ns ns ns ns nC nC nC oC/W Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Voltage (Note 2) IGSS VDS(ON) Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate Charge at 5V Threshold Gate Charge Thermal Resistance Junction to Case rDS(ON) ID = 1A, VGS = 5V V(plateau) VDS = 15V, ID = 4A td(ON) tr td(OFF) tf Qg(TOT) Qg(5) Qg(TH) RJC VDD = 30V, ID = 1A, RGS = 6.25, VGS = 5V Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 1A ISD = 2A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 150 MAX 1.4 UNITS V ns 6-190 RFD4N06L, RFD4N06LSM Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 Unless Otherwise Specified 5 ID, DRAIN CURRENT (A) 4 3 2 1 0 25 50 75 100 125 150 50 TC, CASE TEMPERATURE (oC) 75 100 125 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TJ = MAX RATED TC = 25oC ID, DRAIN CURRENT (A) 12 10 8 6 4 2 0 PULSE DURATION = 80s TC = 25oC VGS = 10V VGS = 7.5V ID, DRAIN CURRENT (A) 1.0 OPERATION IN THIS AREA LIMITED BY rDS(ON) VGS = 5V 4.5V 4V 3.5V 3V 2.5V 2V 7 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 0 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON), DRAIN TO SOURCE CURRENT (A) 8 7 6 5 TC = -40oC 4 3 2 1 0 TC = -40oC 1 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) TC = 125oC TC = 125oC TC = 25oC VDS = 10V PULSE DURATION = 80s DUTY CYCLE 2% 1.6 VGS = 5V 1.4 PULSE DURATION = 80s rDS(ON), DRAIN TO SOURCE ON RESISTANCE() 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 TC = 25oC TC = -40oC TC = 125oC FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 6-191 RFD4N06L, RFD4N06LSM Typical Performance Curves 2 VGS = 5V, ID = 2A Unless Otherwise Specified (Continued) 2 VGS = VDS, ID = 250A NORMALIZED DRAIN TO SOURCE ON RESISTANCE 1 NORMALIZED GATE 1.5 THRESHOLD VOLTAGE 1.5 1 0.5 0.5 0 -50 0 50 100 150 200 0 -50 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 400 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 60 RL = 4 IG(REF) = 0.5mA VGS = 5V GATE SOURCE VOLTAGE VDD = BVDSS VDD = BVDSS 10 VGS, GATE TO SOURCE VOLTAGE (V) 8 C, CAPACITANCE (pF) 300 45 6 200 CISS 30 4 15 0.75BVDSS 0.50BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE 0 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 100 COSS CRSS 2 0 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 6-192 RFD4N06L, RFD4N06LSM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-193 |
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